Computer geeks rabidly anticipate any opportunity to beef up their rigs, but there’s usually a high energy consumption rate associated with making use of the latest and greatest hardware. Hoping to bridge the gap between blazing speeds and unwieldy energy consumption, Samsung has announced the mass production of the industry’s first green four gigabit (Gb) DDR3 devices employing 40 nanometer (nm) class process technology.
Samsung, who only recently completed customer evaluations for its 30nm-class DRAM, first introduced 40nm-class DDR3 last July. “Now, in just seven more months, we have introduced an ultra-low power ‘Green Memory’,” says Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics, “the 4Gb DDR3, which is double the density of its predecessor.”
What does this mean for tech heads who spend hours every day perusing New Egg and other hardware vendors? High performance ratings and significant power savings for high-end notebooks, servers, and data centers. Specifically, the 40nm-class Green DDR3 consumes only 36W, boasting 83 percent savings over the 60nm-class 1Gb DDR2 module. In terms of specs, 4Gb DDR3 boosts the amount of memory for use in servers to 32 gigabytes per module, approximately twice the maximum density found in modules utilizing 2Gb components. The production of 4Gb DDR3 will see Samsung begin a migration of more than 90 percent of its DDR DRAM production to 40nm-class process technology in an effort to provide customers with “the most cost-efficient DRAM component available today.”